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60GHz 11dBm CMOS功率放大器设计 被引量：3

Design of a 60 GHz 11 dBm CMOS Power Amplifier
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摘要 近年来60 GHz附近的一个连续频段可以自由使用,这为短距离的无线个域网等高速率传输的应用提供了条件。设计了一个工作在60 GHz的CMOS功率放大器。采用台积电0.13μmRF-CMOS工艺设计制造,芯片面积为0.35mm×0.4 mm,最大线性输出功率为11 dBm,增益为9.7 dB,漏极增加效率(ηPAE)为9.1%。达到应用在通信距离为10 m的无线个域网(WPAN)射频电路中的要求。设计中采用了厚栅氧化层工艺器件和Load-Pull方法设计最优化输出阻抗Zopt,以提高输出功率。该方法能较大提高CMOS功率放大器的输出功率,可以应用到各种CMOS功率放大器设计中。 The unlicensed band around 60 GHz provides the opportunity for high-data-rate wireless communications such as WPAN. A CMOS power amplifier ηPAE was designed at 60 GHz. The PA delivers 11 dBm output power, the chip area is 0. 35 mm x 0.4 mm, maximum linear output power is 11 dB, gain is 9.7 dB, power added efficiency （ηPAE） is 9.1%. It meets the requests for RF circuits of 10 m WPAN systems. In order to meet the design goals, some special methods were used, including thick oxide technology, and output matching with load-pull theory. These methods also can be used to design different CMOS power amplifiers.
作者 郭超 张文俊 余志平
机构地区 清华大学微电子学研究所
出处 《半导体技术》 CAS CSCD 北大核心 2009年第12期1231-1234,共4页 Semiconductor Technology
基金 国家973项目(2006CB032705)
关键词 功率放大器 射频 互补金属氧化物半导体 个域网 负载牵引 power amplifier RF CMOS WPAN（wireless personal area network） load-pull
分类号 TN722.75 [电子电信—电路与系统]
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参考文献5

  • 1LEE T H.CMOS射频集成电路设计[M].北京:电子工业出版社,2005:231.
  • 2YAO T, GORDON M Q, TANG K K, et al. Algorithmic design of CMOS LNAs and PAs for 60-GHz radio [J]. IEEE JSSC, 2007, 42 (5): 1044-1057.
  • 3PINEL S, SARKAR S, SEN P, et al. A 90 nm CMOS 60 GHz radio [ C ]//Proc of Int SSC Conf. Los Angeles, USA, 2008 : 130-601.
  • 4WERNEHAG J, SJOLAND H.60 GHz 130-nm CMOS second harmonic power amplifiers [ C ]// Asia Pacific Conf on Circuits and Systems. Macao, China, 2008: 300-303.
  • 5DICKSON T O, YAU K H, CHALVATZIS T, et al. The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si (Ge) (Bi) CMOS high- speed building blocks [J] .IEEE JSSC, 2006, 41 (8) : 1830-1845.

同被引文献27

  • 1SMULDERS P. Exploiting the 60 GHz band for local wireless multimedia access: prospects and future directions [ J]. IEEE Communications Magazine, 2002, 40 (1): 140-147.
  • 2Analysys Mason. The message from MWC 2010: indoor coverage and subscriber management are the keys to dealing with exponential growth in wireless traffic [ R]. 2010.
  • 3YONG S K, XIA P F, GARCIA A V. 60 GHz technology for Gbps WLAN and WPAN: from theory to practice [M]. UK: John Wiley& Sons, Inc, 2011.
  • 4SILIGARIS A, RICHARD O, MARTINEAU B. A 65 nm CMOS fully integrated transceiver module for 60 GHz wireless HD applications [ C] // Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC). San Francisco, CA, USA, 2011: 162-164.
  • 5COHEN E, RAVID S, RITrER D. 60 GHz 45 nm PA for Linear OFDM signal with predistortion correction achieving 6. 1% PAE and -28 dB EVM [C] //Proceedings of IEEE Radio Frequency Integrated Circuits Symposium. Boston, USA, 2009: 35-38.
  • 6POZAR D. Microwave engineering [ M ]. USA: John Wiley& Sons, Inc, 2011: 558-597.
  • 7CHEN J S, NIKNEJAD A M. A compact 1 V 18.6 dBm 60 GHz power amplifier in 65 nm CMOS [ C] // Pro- ceedings of IEEE International Solid-State Circuits Con- ference Digest of Technical Papers (ISSCC). San Fran- cisco, CA, USA, 2011: 432-433.
  • 8CHANG J N, LIN Y S. A high-performanee CMOSpower amplifier for 60 GHz short-range communication systems[J]. Microwave ~ Optical Technology Let- ters, 2013, 55(5) :1155-1160.
  • 9JEN Y N, TSAIJ H, HUANGT W, et al. Design and analysis of a 55 to 71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process[J]. IEEE Transactions on Microwave Theorv ~ TechniQues. 2009. 57(7) ~ 1637-16zt6.
  • 10HE G, ZHANG B, SHEN X. A k-band gain enhanced power amplifier in 0. 18/zm CMOS process by slow wave structure[C~//2014 IEEE International Symposi- um on Radio-Frequency Integration Technology (RFIT) Hefei:IEEE,2014 : 1-3. DOI: 10. ll09/RFIT. 2014.6933257.

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半导体技术
2009年 第12期

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