摘要
介绍了Au-In键合在MEMS芯片封装中的应用。根据现有的工艺设备和实验条件对制备铟凸点阵列进行了工艺设计,对铟凸点制备技术进行了研究,最终在硅圆片上制备了6μm高的铟凸点阵列。在150～300℃下成功地进行了Au-In倒装键合实验。在300℃,0.3 MPa压力下键合的剪切强度达到了5 MPa.
This paper introduce the application of Au-In bonding for MEMS package. According to the Equipment and the experiment condition, we designed the process of indium bump arrays, and researched the fabrication of indium film and technology of indium bumps. Finally 6μm-high indium bump arrays were fabricated on the wafer successfully. We have conducted Au-In Flip-Cip bonding experiments at the temperature 150 - 250 %. The die shear strength is 10 MPa with 250 ℃ and 0. 25 MPa bonding stress.
出处
《仪表技术与传感器》
CSCD
北大核心
2009年第B11期205-207,共3页
Instrument Technique and Sensor
基金
国家863计划资助项目(2007AA04Z306)
