摘要
采用溶胶-凝胶法在硅衬底上制备了Al2O3:Tb3+薄膜;并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行了一系列表征;分析了Al2O3:Tb3+薄膜的发光机理,探讨了热处理温度和Tb3+掺杂浓度对发光性能的影响规律.研究结果表明,采用溶胶-凝胶法制备工艺,制备了高发光强度的Al2O3:Tb3+薄膜,薄膜的最佳激发波长为240nm,Tb3+的最佳掺杂浓度为5mol%(Tb2O3/Al2O3=5mol%),在240nm光激发下,最强的发射峰出现在544nm附近;并且制备的Al2O3:Tb3+薄膜表面致密、平整且无裂纹产生,表面粗糙度约为1.3nm,有利于硅基光电子器件的制备和应用.
Tb3＋-doped Al2O3 films on silicon substrates were prepared by the sol-gel method.The Tb3＋-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis,X-ray diffraction,scanning electron microscope,atomic force microscope and photoluminescence spectra as well.The photoluminescence mechanism of Tb3＋-doped Al2O3 films was analyzed.The effects of heat-treatment temperature and Tb3＋ ion concentration on the luminescence property of Tb3＋∶Al2O3 films were discussed.The results show that the prepared Al2O3∶Tb3＋ film has high luminescence intensity,the optimum excitation wavelength is 240nm,the optimum concentration of Tb3＋ dopant is 5mol%,and the main emission is at 544nm under excitation at 240nm.And the prepared Al2O3∶Tb3＋ film has a dense,smooth and crack-free surface texture with a roughness of less than 1.3nm.It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第6期1105-1109,共5页
Journal of Inorganic Materials
基金
浙江省重大科技计划项目(2006C11029)
