摘要
通过控制高压腔内的温度、压力梯度合成了粒径300～500μm的片状立方氮化硼（cBN）单晶体。通过在原料中掺杂及对合成晶体的真空高温扩散掺杂，获得了具有半导体导电性的立方氯化硼材料并测试了其V－A特性。
We synthesized flaky cBN crystals that the grade of which is about 300-500 μm by method of controlling temperature and pressure gradient in synthesized cell. The cBN crystal material with semiconductor characteristic are obtained by mixing method in material and in the high temperature-vacuum diffusion process. At the same time its V-A characteristic curves were tested.
出处
《高压物理学报》
EI
CAS
CSCD
北大核心
1998年第3期168-173,共6页
Chinese Journal of High Pressure Physics
基金
国家自然科学基金!69576012
