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Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor 被引量：3

Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor
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摘要 Electromagnetic field distribution in the vertical metal organic chemical vapour deposition （MOCVD） reactor is simulated by using the finite element method （FEM）. The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements. Electromagnetic field distribution in the vertical metal organic chemical vapour deposition （MOCVD） reactor is simulated by using the finite element method （FEM）. The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.
作者 李志明 郝跃 张进成 许晟瑞 倪金玉 周小伟
机构地区 School of Microelectronics Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第11期5072-5077,共6页 中国物理B（英文版）
基金 Project supported by the State Key Program of National Natural Science Foundation of China (Grant No 60736033) the National Natural Science Fund of China (Grant No 60676048)
关键词 MOCVD finite element electromagnetic heating Joule heat MOCVD, finite element, electromagnetic heating, Joule heat
分类号 TN304.2 [电子电信—物理电子学]
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参考文献7

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同被引文献33

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  • 2徐谦,左然,张红.反向流动垂直喷淋式MOCVD反应器设计与数值模拟[J].人工晶体学报,2005,34(6):1059-1064. 被引量：13
  • 3张群社,陈治明,李留臣,蒲红斌,封先锋,陈曦.不同耦合间隙对大直径SiC晶体生长感应加热系统的影响[J].人工晶体学报,2006,35(4):781-784. 被引量：5
  • 4YANG Lian-qiao,CHEN Zun-miao,ZHANG Jian-hua,LI A L.Transport phenomena in a novel large MOCVD reactor for epitaxial growth of gan thin films [J].IEEE Transactions on Semiconductor Manufacturing,2012,25(1):16-18.
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  • 7CHENG S,CHOU P C.Novel packaging design for high-power GaN-on-Si high electron mobility transistors(HEMTs)[J].IntemationalJoumal of Thermal Sciences,2013,66:63-70.
  • 8SHEKARI L,RAMIZY A,OMAR K,ABU HASSAN H,HASSAN Z.High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation [J].Applied Surface Science,2012,263:50-53.
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引证文献3

二级引证文献4

Chinese Physics B
2009年 第11期

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