摘要
本文采用有限元分析方法系统地研究了大尺寸S iC晶体PVT法生长装置中的加热组件不同的耦合间隙对生长系统中的感应磁场、感生电流和焦耳热的影响;分析比较了取不同的耦合间隙时系统达到热平衡状态所需时间的不同。得出了在中频电源的输出功率和频率都不变的前提下,在线圈匝数已固定的条件下,通过缩小耦合间隙可以提高系统的加热效率,缩短系统达到热平衡状态所需时间的结论。
The influences of different coupling widths of the heating subassembly on the induction magnetic field, induction current and Joule heat in the large size SiC growth system have been investigated systematically. By comparing of the time of heating-up for quasi-stationary state of growth system, it can be concluded that induction heating efficiency can be increased while the time of heatingup stage can be shortened in the growth system, assuming that the RF power, frequency and turns of coil are constant.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第4期781-784,共4页
Journal of Synthetic Crystals
基金
陕西省重大科技创新项目(No.2004K07-G9)
西安理工大学优秀博士学位论文研究基金资助
关键词
SIC
PVT法
磁矢势
焦耳热
SiC
PVT method
magnetic potential
Joule heat
