摘要
研究了双层金属结构Ａｕ／Ｓｎ与ｐ－ＨｇＣｄＴｅ上的接触电阻．实验测得Ａｕ／Ｓｎ与ｐ－Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２１７，０．４１）的比接触电阻ρｃ（２９５Ｋ、７７Ｋ）为１０－２～１０４Ωｃｍ２．将这种电极接触应用于Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２３）光伏器件，测得ｐｎ结Ｉ－Ｖ特性的正向斜率为１２．６Ω，即电极接触电阻小于１２．
The contact resistance between Au/Sn and p HgCdTe was investigated. The specific contact resistance ρ c (295K、77K) of Au/Sn/p HgCdTe was measured, being 10 -2 ￣10 -4 Ωcm 2. By applying the Au/Sn on p HgCdTe contact to PV devices of Hg 1- x Cd x Te ( x =0.23), the current voltage characteristics of the p n junction were measured, and the results show that the contact resistance is less than 12.6Ω.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第5期397-400,共4页
Journal of Infrared and Millimeter Waves
关键词
欧姆接触
碲镉汞
比接触电阻
金/锡结构
ohmic contact, HgCdTe, Au/Sn structure, specific contact resistance.
