摘要
通过实验和模拟计算对比分析了i/p界面过渡层对太阳电池性能的影响.结合具体实验工艺参数,模拟计算了不同带隙和缺陷态密度的过渡层对太阳电池的影响,同时结合实验情况重现了宽带隙高缺陷态密度过渡层对太阳电池的损伤,为实验结果提供了理论依据.通过优化调整i/p界面过渡层的制备方法得到了转换效率为7.09%的聚酰亚胺衬底非晶硅薄膜太阳电池.
The experiment and AMPS modeling have been used to analyze the characteristics of a-Si solar cells on flexible substrate with different buffer layers at the i/p interface. Combining with technology parameters, this paper uses different band gap and the defect density of states of the interface layer to simulate the characteristics of solar cells. The modeling results show that the solar cells are deteriorated by the interface layer with a big band gap and large defect density of states. By optimizing treatment of i/p interface, the amorphous silicon solar cell on polyimide substrate has been achieved with an efficiency of 7.09%.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第11期7921-7925,共5页
Acta Physica Sinica
基金
国家高技术研究发展计划(863)项目(批准号:2006AA05Z422)
天津市科技攻关计划(批准号:06YFGPGX0800)
天津市应用基础及前沿技术研究计划(批准号:08JCYBJC13100)资助的课题~~
