摘要
短沟道效应是小尺寸ＭＯＳＦＥＴ中很重要的物理效应之一，凹槽栅ＭＯＳＦＥＴ对短沟道效应有很强的抑制能力。通过对凹槽栅ＭＯＳＦＥＴ结构、特性的研究，发现凹槽拐角对凹槽栅ＭＯＳＦＥＴ的阈值电压及特性有着显著的影响。凹槽拐角处的阈值电压决定着整个凹槽栅ＭＯＳＦＥＴ的阈值电压。凹槽拐角的曲率半径是凹槽ＭＯＳＦＥＴ一个重要的结构参数。通过对凹槽拐角的曲率半径、源漏结深及沟道掺杂浓度进行优化设计，可使凹槽栅ＭＯＳＦＥＴ不仅能完成抑制短沟道效应，而且具有相当好的输出特性和Ｓ因子，使这种结构适合于深亚微米ＭＯＳＦＥＴ器件。
Short channel effect(SCE)is one of the important physical effects in MOSFET.The grooved gate MOSFET can effectively supress SCE.Through the study on the structure and characteristic of grooved gate MOSFET,it is found that the concave corner greatly influence the threshold voltage and characteristics of the grooved gate MOSFET.The radius of the concave corner is a very important structural parameter.By optimizing the radius of the concave corner,source/drain junction depth and the channel doping,the grooved gate MOSFET can completely supress the SCE and have good characteristic and lower S factor,and fit for deep submicrometer MOSFET.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第5期18-21,39,共5页
Semiconductor Technology
