摘要
报道一组单片HBTVCO电路的设计、制作及其测试结果。电路采用HBT作为有源器件，PN结二极管作为变容管。S波段单片VCO的输出功率为0dBm，调谐范围100MHz，在载波频率2．84GHz处，相位噪声为－80dBc／Hz＠100kHz。以C波段单片HBTVCO的输出功率为－10dBm。这些结果表示HBT在微波与毫米波振荡器运用中具有较好的低相位噪声特性。
This paper describes the design, fabrication and performance of agroup of the monolithic VCOs using heterojunction bipolar transistor (HBT) as active device and integrated PN junction diode as the varactor. An 100 MHz continuous tuning bandwidth is achieved with output power of 0 dBm in S band. The phasenoise level of -80 dBc/Hz for offset frequency of 100 kHz is measured at 2. 84GHz. In C band,the VCOs output power is - 10 dBm. These results indicate thatHBTs are excellent candidates of active elements for low phase noise microwave andmillimeter-wave oscillator applications .
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期269-274,共6页
Research & Progress of SSE
