摘要
以Y36°钽酸锂(LiTaO3,LT)晶片为研究对象,通过对同成分LT晶片(CLT)和深度还原黑色LT晶片(BLT)的比较研究,探讨了表面还原处理对钽酸锂晶片电学性能的影响。X射线衍射研究显示,还原处理对晶体结构没有明显影响。BLT的电导率比CLT明显高4个数量级,达到7.7×10-12Ω-.1cm-1,其压电常数d33、居里温度和介电常数与CLT相差不大,介电损耗有所提高。研究结果表明,还原处理不改变晶体结构,但能提高晶片表面的电导率,从而改善和消除晶片在器件制备过程中因热释电效应引起的放电现象。
The comparative study on electrical properties of Y36° lithium tantalate reduction （termed as CLT and investigated. XRD patterns crystal before and after BLT respectively） was showed that reduction process did not influence the crystal structure obviously. The electrical conductivity of BLT increased markedly to 10^-12 Ω^-1·cm^-1, which was four order of magnitude higher than that of CLT. The piezoelectric constant d33, the dielectric constant and the Curie temperature only changed slightly, and the dielectric loss increased. The results showed that the reduction process could improve or even eliminate the pyroelectric discharge during SAW device manufacture by increasing the electrical conductivity on the surface of crystal without distinct change of crystal structure.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2009年第5期713-717,共5页
Chinese Journal of Rare Metals
基金
国家高技术研究发展计划(863)项目(2006AA030106)资助
关键词
钽酸锂
还原
电导率
压电性能
介电性能
lithium tantalate
reduction
electrical conductivity
piezoelectricity
dielectric property
