摘要
以无水乙醇为溶剂,氨水为催化剂,利用正硅酸乙酯(TEOS)水解,并在500℃下煅烧1h,制备了SiO2粉体.将SiO2粉体作为内核浸渍到以硝酸亚铈、乙酰丙酮和正丙醇为原料制备的铈溶胶中,得到包覆型CeO2@SiO2复合粉体.利用XRD、SEM、TEM和FT-IR等测试手段,对所制备样品的物相结构、形貌、粒径大小、团聚情况进行表征.将所制备的包覆型CeO2@SiO2复合粉体配制成抛光浆料用于砷化镓晶片的化学机械抛光,用原子力显微镜(AFM)观察抛光表面的微观形貌,测量表面粗糙度.结果表明,采用浸渍工艺成功制备出单分散球形,粒径在400～450nm,负载均匀的包覆型CeO2@SiO2复合粉体.复合粉体中CeO2的包覆量随着铈溶胶中铈离子浓度的升高而增大.经包覆型CeO2@SiO2复合磨料抛光后的砷化镓晶片表面的微观起伏更趋于平缓,在1μm×1μm范围内表面粗糙度Ra值为0.819nm,获得了具有亚纳米量级粗糙度的抛光表面.
In absolute ethanol, uhrafine SiO2 particles were prepared by hydrolyzing tetraethylorthosilicate using ammonia as catalyst and calcined at 500℃ for 1 h. CeO2 @ SiO2 composite nanoparticle was obtained by immersing SiO2 in sols with different cerium ion concentrations, which were prepared using cerium nitrate, diacetone, normal propyl alcohol as raw materials. The phase composition, morphology, particle size and agglomerate of the samples were analyzed by X -ray diffraction （XRD）, scanning electron microscope （SEM）, transmission electron microscope （TEM） and infrared spectroscopy （FF - IR ）. The slurry collocated by as - prepared CeO2 @ SiO2 composite nanoparticles was used to polish GaAs wafer （100）. The polishing behavior of CeO2@ SiO2 composite abrasive was characterized by Atomic Force Microscope （AFM）. The results indicated that monodisperse, spherical CeO2 - coated SiO2 particles were prepared successfully. The particle size was 400- 450 nm and SiO： particle was uniformly coated by CeO2. The amount of coated CeO2 increased gradually with the increase of cerium ion concentration in the sol. After chemical -mechanical polishing by CeO2@ SiO2 composite abrasive, ultrasmooth surface of GaAs （100） with a surface roughness （Ra） of 0.819 nm within 1μm×1μm are a was obtained.
出处
《摩擦学学报》
EI
CAS
CSCD
北大核心
2009年第5期412-417,共6页
Tribology
基金
江苏省工业支撑计划资助项目(BE2008037)
常州市工业科技攻关资助项目(CE2007068
CE2008083)
关键词
CeO2@SiO2复合磨料
浸渍
包覆
砷化镓
抛光
CeO2@ SiO2 composite abrasive, impregnating, coating, gallium arsenide, polishing
