摘要
ＡＥＳ、ＸＰＳ分析和ＸＲＤ谱结果证明：采用低能双离子束淀积（ＩＢＤ）技术，在ＧａＳｂ（００１）衬底上共淀积生长了闪锌矿结构ｃ－ＧａＮ．Ｘ光Φ扫描显示，生长薄膜与衬底晶向匹配关系是ｃ－ＧａＮ［１１０］／／ＧａＳｂ［１００］．由此可以得到：它们的晶格失配度为４．６６％，ＧａＳｂ是已采用生长ｃ－ＧａＮ衬底材料中较好的一种．
Abstract It is verified by means of AES, XPS and XRD that films of zinc blende structure c GaN have been grown on GaSb(001) substrate by Low Dual Ion Beam Deposition (IBD) Technique. The results of X ray Φ scan show that the matched film/substrate growth relationship is c GaN //GaSb . The lattice mismatch is 4 66%. GaSb is a better substrate material used for growing c GaN than others.
