期刊文献+

氮化铝(AlN)晶须碳热还原法合成研究 被引量:3

Synthesis of Aluminum Nitride(AlN)Whiskers by Carbothermal Reduction
在线阅读 下载PDF
导出
摘要 本文以氧化铝和石墨为原料,在普通氮气气氛条件下成功地合成出了氮化铝(AlN)晶须。对碳热还原法合成AlN晶须的工艺条件、显微形貌、生长取向和生长机理进行了初步分析和探讨。由于生长条件不同,AlN晶须通常呈六棱柱状、片状或四方形截面状等多种形态。六棱柱状晶须的生长取向为[0001]方向,而片状和四方形截面晶须的生长取向则为[0111]等其它方向。碳热还原法合成AlN晶须的初期阶段,矿化剂与原料形成的低共熔液相为晶须的成核提供了液相触媒(Catalyst),即晶须以VLS机制成核,但晶须后期生长过程中则主要以VS机制为主。 rowth mechanism and morphologies of AlN whiskers prepared by carbothermal reduction method are studied as well as the technological condition.The optimum growth condition is at 1600~1700℃ for 3~5 hours with flowing nitrogen(0.6L/min),when the raw materials are αAl2O3 and graphite(Al2O3∶C=4∶1 in weight).Generally,whiskers with hexagonal cross section grow along and platelike whiskers have a growth orientation parallel to [0111] et al other than .During the growth of whiskers,VLS mechanism and VS mechanism serve the function together.In the early stage,AlN whiskers nucleate by VLS mechanism and after the liquid catalyst disappears,VS mechanism plays the leading role.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 1998年第3期206-212,共7页 Journal of Synthetic Crystals
基金 国家自然科学基金
关键词 晶须 氮化铝 碳热还原 合成 whiskers,aluminum nitride,carbothermal reduction,sythesizs
  • 相关文献

参考文献3

  • 1缪卫国,吴音,周和平.AlN晶须的形貌及取向[J].无机材料学报,1997,12(3):425-429. 被引量:3
  • 2周和平,中国学术期刊文摘科技快报,1997年,3卷,9期,1121页
  • 3Wei G C,Am Ceram Soc Bull,1985年,64卷,2期,298页

二级参考文献1

  • 1Wang M,J Mater Sci,1990年,25卷,1690页

共引文献2

同被引文献35

  • 1董鹏莉,王习东,张梅,李文超.β-SiAlON及β-SiAlON-SiC复合材料合成的研究[J].耐火材料,2006,40(2):110-113. 被引量:11
  • 2[1]Marchant D D , Nemecek T E. Aluminum Nitride: Preparation, Processing and Properties [ A]. Man F Yan, Koichi Niwa, et al, eds. Advances in Ceramic (Ceramic Substrates and Packages for Electronic Applications) [C]. Westerville, Ohio: The American Ceramic Society, Inc., 1989, 26:19.
  • 3[2]Taylor K M, Lenie Camille. Some Properties of Aluminum Nitride [J]. Journal of the Electrochemical Socity, 1960,107(4):308.
  • 4[4]Katsutoshi Y, Takeji M. Manufacture of Aluminum Nitride Single Crystal [P]. Japan Patent: JP07,277,897 (95,277,897), 1995-10-24.
  • 5[5]Chen Kexin, Zhou Heping, Fu Renli. Investigation on Combustion Synthesis of AlN Whiskers [ A ]. Yan D S ed. Proceedings of The First China International Conference on High-performance Ceramics [C]. Beijing: Tsinghua University Press, 1999:539.
  • 6[6]Lee Kyung-Jae, Ahn Do-Hwan, Kim Yong-Seog. Aluminum Nitride Whisker Formation during Combustion Synthesis [J]. Journal of the American Ceramic Society, 2000, 83(5):1117.
  • 7[7]Slack G A, Mcnelly T F. AlN Single Crystals [J]. Journal of Crystal Growth, 1977, 42:560.
  • 8[8]Hideaki Iton, Hisashi Morikawa, Kohzho Sugiyama. Growth of Aluminum Nitride Pillar Crystals by Chemical Vapor Deposition [ J ]. Journal of Crystal Growth, 1989, 94(2) :387.
  • 9[10]Dugger C O. The Synthesis of Aluminum Nitride Single Crystals [J]. Materials Research Bulletin,1974, 9:331.
  • 10[11]Caceres Pablo G, Schmid Herberk K. Morphology and Crystallography of Aluminum Nitride Whiskers [ J ]. Journal of the American Ceramic Society,1994,77(4):977.

引证文献3

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部