摘要
使用量子阱能带混合隧穿共振理论及MonteCarlo模拟方法计算了GaAs／AlAs异质谷间转移电子器件的静态和动态工作特性．发现有源层中的电场及Г、X和L三能谷的电子布居基本上可分为强场立能谷区和弱场耿氏区两部分．控制掺杂接日的浓度能调制这两区域的相对大小，控制两种谷间转移电子效应的相互作用，从而改变器件的静态和动态性能动态模拟给出了器件的新射频工作模式：上能谷电子区的宽度调制和低场耿氏区电场的上下浮动．运用这一工作模式解释了器件的各类新工作特性。
By using the band mixing tunnelling resonant theory in quantum well and the Monte Carlo simulation, the static and dynamic performances of GaAs/AIAs heterostructure intervalley transferred electron devices are investigated. It is found that the electric field in active layer and the electron population in P, X and i. three energy valleys may be described by the high field higher valleys zone and the low field Gunn zone. The relatived size of these two regions and the interaction between two sorts of intervalley transferred electron effects can be controlled through the adjustment for dopping interface concentration, from which the static and dynamic performances of devices may be revised. Through the dynamic simulation, a new rf operation mode for heterostructure intervalley transferred electron devices is given, where the width of higher valley zone and the electric field in Gunn zone are modulated by the rf device voltage. We have explained vations device behaviors by using this mode and proposed the possibility of using this quantum well controller to develop new helerostructure intervalley transferred electron triode.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第8期51-55,共5页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
异质谷间转移
电子器件
模拟
半导体异质结构
Heterostructure intervalley transferred electron devices, Dynamic simulation, Operation mode
