摘要
在氢气气氛下对绝缘体表面进行热处理提高金属-绝缘体-金属（MIM）器件的I-V特性曲线的对称性，简化了该器件的制作工艺，并探讨底电极掺氮对MIM器件I-V特性曲线的影响，用n-n--n能带模型对MIM器件的I-V特性曲线对称性加以解释．
A heat-treating of the surface of an insulator in hydrogen atmosphere can not only improve the symmetry of I-V characteristic of MIM element but also reduce the making process. Meanwhile,using a novel p-n-n band model for MId element, we can explain the new experimental phenomenon. On the other hand, we made further proof that the band model is suitable for interpreting many experimental phenomena in MIM element by studying the effect of doping nitrogen in tantalum on the I-V characteristic of MIM element.
出处
《吉林大学自然科学学报》
CSCD
1998年第3期52-54,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
