摘要
采用射频磁控溅射与微细加工技术,制得Cu/BST/Pt/Ti/SiO2/Si的MIM(金属-绝缘体-金属)微电容结构。研究了不同退火时间、薄膜厚度对钛酸锶钡(BST)纳米薄膜介电常数和漏电流密度的影响,结果表明,随着退火时间的延长,BST纳米薄膜结晶度提高,介电常数增加,退火30 min的纳米薄膜具有最高的介电常数和较小的漏电流密度。同时还得出介电常数随薄膜厚度的减少而减少,在0.1 MV/cm下,90 nm和50 nm薄膜的漏电流密度分别为5.35×10-8A/cm2和6×10-6A/cm2。
Cu/BST/Pt/Ti/SiO2/Si structure MIM capacitors were prepared by RF sputtering and microfabrication techniques. The effects of annealing time and film thickness on dielectric constant and leakage current density of BST were investigated. It indicated that the dielectric constant is increased by delaying the annealing time. The dielectric constant reached the highest value when BST has been annealed for 30 min and the leakage current is relatively low in this experiment. Reducing the film thickness will decrease the dielectric constant. The leakage current density under 0.1 MV/cm of 90 nm and 50 nm thickness BST thin film was 5.35 × 10-8A/cm2, 6 × 10-6 A/cm2 respectively.
出处
《微细加工技术》
EI
2006年第1期32-35,共4页
Microfabrication Technology
基金
上海市科委纳米专项项目(0214nm032)
教育部科学技术研究重大项目资助(重大0307)
上海市AM基金资助项目(0511)
关键词
BST
磁控溅射
膜厚
介电性能
BST
RF magnetron sputtering
film thickness
dielectric property
