摘要
采用电桥及X射线衍射线形分析法研究磁控溅射Cu／Ni多层膜（CLI及Ni单层厚度均为5nm）的室温电阻率及平均位错密度随对层（bilayer）层数的变化规律．结果表明，随层数增加，电阻率及平均位错密度减少；多层膜电阻率大于单层膜电阻率；单层膜电阻率大于同质块状体的电阻率．并对其微观机制进行分析．
Changes in electric resistivity and dislocation density of the Cu/Ni multilayer films with the number of bilayer at room temperature have been studied by means of bridge method and X-ray profile analysis. Cu/Ni multilayer films were prepared with the aid of magnetron sputtering. The thickness of the monolayer of Cu or Ni is about 5 nm. The results show that the electric resistlvity and averaged dislocation density decrease as the number of the layers increases, the electric resistivity of multilayer films is larger than that of the single layer films and the electric resistivity of single layer films is larger than that of the bulk. The experimental results are analyzed in detail.
出处
《吉林大学自然科学学报》
CAS
CSCD
1998年第3期49-51,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
多层膜
电阻率
位错密度
磁控溅射
铜/镍
multilayer films, electric resistivity, dislocation density, magnetron sputtering
