摘要
采用固相烧结法制备了掺Sn的层状热电氧化物Bi2-ySnySr2Co2O9-δ(y=0、0.02、0.04、0.06、0.08、0.10)。XRD结果表明Bi-Sr-Co-O氧化物样品存在一定程度的织构。Seebeck系数为正,说明该氧化物为p型半导体。掺Sn后电导率和热导率均增大。对于Seebeck系数和功率因子,存在着掺Sn量的最优值,即Bi1.96Sn0.04Sr2Co2O9-δ。掺Sn样品的最高ZT值比未掺Sn样品提高了约2倍。
A series of Sn doped Bi2-ySnySr2Co2O9-δ（y=0, 0.02, 0.04, 0.06, 0.08, 0.10） samples was synthesized by solid state reaction method. The XRD results demonstrate the preferred alignment of Bi-Sr-Co-O grains due to the layered structure of the compounds. The positive Seebeck coefficients reveal that Bi-Sr-Co-O is p-type conductive. The Sn-doping increases the electrical conductivity as well as the thermal conductivity, while the Bi1.96Sn0.04Sr2Co2O9-δ sample exhibits highest Seebeck coefficient and power factor among all the samples. A highest ZT value of 0.08 has been obtained at 773K for y=0.04, about two times higher than that of the BSCO sample without Sn doping.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2009年第8期1326-1328,1337,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50601022)
国家高技术研究发展计划(863计划)资助项目(2007AA03Z234)
关键词
热电材料
钴基层状氧化物
锡掺杂
thermoelectric materials
cobalt layered oxides
Sn doping
