摘要
提出了用于计算ＧａＡｓ场效应微波功率器件峰值沟道温度的等效结构模型．其中底座与芯片等截面的等效厚度处理和多胞单胞化处理，使计算工作量下降约二个数量级．计算的峰值沟道温度与修正（包括了胞内热场分布影响、胞间热场分布影响和瞬态冷却过程影响）后的电学法测量值的差别约为３℃．
Abstract The proposed model reduces the computation time at least by an order of two. The difference between the calculated peak channel temperature and the corrected measured value by electrical method is ～3℃. In the model the heat sink is replaced with an equivalent one whose cross section is the same as the chip’s, whose equivalent thickness is much less than the real one; the array of parallel cells is represented by only one cell. The correction to the measured value includes effect of steady state temperature field and cold down process on electrical method. The effect of device structure parameters on the peak channel tempecature is studied by using this model.
基金
电子部电子科学研究基金
陕西省自然科学基金
