摘要
给出了具有二三个量子阱的Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ／ＩｎＰ张应变量子阱材料的光荧光谱及ｘ射线双晶衍射摇摆曲线，指出了光荧光峰为量子阱中导带子带和价带子带间本征复合机构所致。理论上分析了光荧光谱中双峰强度比随温度变化的关系，理论计算和实测结果基本一致。
The photoluminescence spectrum and the double crystal xray diffraction rocking curves from tensile strained quantum materials with 2 and 3 wells are reported in this paper.It indicats that PL peaks are caused by the intrinsic recombination mechanism between conduction subbands and valence subbands in the quantum well materials.The function of the twopeak intensity ratio with temperature is analyzed theoretically.The calculation results are basically in agreement with the actual results.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第4期54-58,共5页
Semiconductor Technology
关键词
张应变
光荧光谱
量子阱材料
半导体材料
Tensile strain Photoluminescence spectrums Quantum well material
