摘要
报道了用低压金属有机化学汽相淀积（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓＰ体材料及ＩｎＧａＡｓＰ（１．３μｍ）／ＩｎＧａＡｓＰ（１．６μｍ）量子阱结构的生长条件和实验结果。比较了５５０℃和５８０℃两个生长温度下Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ体材料及相应量子阱结构的特性，表明在５８０℃生长条件下，晶体具有更好的质量和特性。
Growth conditions and experimental results of InGaAsP and InGaAsP (1 . 3um)/InGaAsP( 1. 6μm) quantum well grown by low-pressure MOCVD on (100) InP sub strate are reported. A comparison of characteristics for In1-xGaxAsyP1-y and the corresponding quantum well grown at temporature of 550℃ and 580℃ is made. It is shown that crystal grown at 580 ℃ exhibits higher quality and better performances.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第2期159-162,174,共5页
Semiconductor Optoelectronics
