摘要
研究了多晶硅锭定向凝固过程中晶体和熔体中的温度分布、固液界面的温度场,并对定向凝固过程进行了数值模拟,对热场对多晶硅晶体生长的影响进行了系统的理论分析和试验验证。
In this paper, the temperature distribution of the crystal and.melt for the polycrystalline silicon ingot directional solidification process was discussed. And the temperature field of the solid-liquid interface was studied. The directional solidification process was visualized by the numerical simulation. A systematic theoretical analysis and experimental validation was provided for the effect about thermal field to polycrystalline silicon crystal growth.
出处
《电子工业专用设备》
2009年第6期40-43,46,共5页
Equipment for Electronic Products Manufacturing
关键词
多晶硅锭
定向凝固过程
热场
数值模拟
Polycrystalline silicon ingot
Directional solidification process
Thermal field
Numerical simulation
