摘要
选取高低两个LET点(40和60keV/m),剂量点分别为50,100,200,400,600Gy进行辐照处理,研究了生防菌的存活率与突变率的关系,抑菌谱以及活性等。结果表明,在高LET条件下,低剂量辐照就可以得到较多的突变体,并且BJ1有较高的存活率和突变谱,有利于筛选优良的正突变体。因此高LET较低LET有更为明显的辐射诱变效应。
To explore the effects of different linear energy transfer（LET）of ^12C^6＋ ion Beam irradiation on BJ1, survivals and hiocontrol effects were cultured and treated with LET= 40 and 60 keV/μm at the doses of 50, 100, 200, 400 and 600 Gy, respectively. The results showed more mutations and hiocontrol charts and higher survivals were obtained with high LET（60 keV/μm） irradiations at lower dose, which was useful to screen good positive mutations. Based on the results above, it could be concluded that the condition of high LET（60 keV/μm） had obvious mutagenic effects than that of low LET（40 keV/μm）.
出处
《原子核物理评论》
CAS
CSCD
北大核心
2009年第2期168-171,共4页
Nuclear Physics Review
基金
中国科学院西部之光人才培养计划资助项目(O606180XB0)~~
关键词
传能线密度
C离子
生防菌BJ1
辐射
诱变效应
linear energy transfer
^12C^6＋ion beam
hiocontrol bacterium BJ1
irradiation
mutagenic effect
