摘要
本实验是在单晶硅片上热生长一层ＳｉＯ２，然后用真空淀积的方法获得一层超微粒ＳｎＯ２薄膜，通过对ＳｎＯ２／ＳｉＯ２薄膜电阻与相对湿度关系的测试，发现阻湿的线性特性和灵敏度明显优于ＳｎＯ２薄膜和ＳｉＯ２薄膜，测湿范围明显展宽。
In the experiment, first of all a piece of SiO 2 film is formed on the monocrystallined silicon by beating. Then another film-ultrafineness particle SnO 2 is deposited on the SiO 2 film by the means of Vacuum-reaction evaporation. The linear resistance against humidity characteristics and sensing characteristics to humidity of SnO 2/SiO 2 film is obviously observed to be better than that of each single film by determining the relation between the resistance of snO 2/SiO 2 film and relative humidity. The humidity measuring range is also widened.
出处
《传感器技术》
CSCD
1998年第4期22-23,26,共3页
Journal of Transducer Technology
