摘要
利用直流磁控溅射技术制备了Ｈｏ替代的ＹＢＣＯ超导薄膜，Ｘ射线技术（θ－２θ扫描：θ－θ扫描及—扫描）、ＳＥＭ和电子通道花样（ＥＣＰ）测试表明，所制备的掺杂薄膜具有高平面内外延性和平面外外延性。发现掺杂薄膜的临界电流密度Ｊｃ比ＹＢＣＯ薄膜的有不同程度的提高，掺杂量ｘ＝０４时有最大值。
The Ho substitution YBCO thin films were prepared by using single target method by DCmagnetron sputtering technique. The thin films properties such as Tc and Jc were mainly effected by the deposition temperature Ts. The Jc values in all of the substituted films increased, with an optimal effect achieved at x=04 concentration at the 77 K and 0～3 T.
出处
《中国稀土学报》
CAS
CSCD
北大核心
1998年第2期139-142,共4页
Journal of the Chinese Society of Rare Earths
