摘要
将中等剂量的H+注入到硅单晶中，并结合硅片低温键合及后续热处理形成了智能剥离SOI新材料。用热波分析技术对注H+片的剥离现象进行了无损非接触检测研究。采用剖面透射电子显微镜与高分辨率透射电子显微镜等手段对这种SOI材料的微结构进行了分析。研究表明，智能剥离SOI是一种可通过较简单的工艺获得高质量SOI材料的新途径。
New silicon on insulator (SOI) materials have been formed by Smartcut process which includes moderate dose H+ implantation, low temperature waferbonding and subsequent thermal treatment. The flaking phenomenon of H+-implanted Si sample during annealing process has been studied by thermal wave analysis technology. Cross-sectional transmission electron microscopy (XTEM) and highresolution electron microstopy (HREM) have been used to characterize the microstrhcture of the formed SOI material. The results demonstrate that Smart-cuttechnology is a good method to fabricate high quality SOI materials at lower cost.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第2期181-187,共7页
Research & Progress of SSE
