摘要
用光电化学方法研究了铜电极在含缓蚀剂BTA和PTD的硼砂和硼砂-硼酸缓冲溶液中的光电化学行为,研究了不同浓度缓蚀剂对铜电极表面Cu_2O完全还原为Cu的电位φ_v的影响。试验结果表明φ_v表征了缓蚀剂所形成的膜与Cu_2O层之间的结合力,缓蚀作用越强则φ_v越负。
The inhibition behaviour of BTA and PTD in borax solution for copper was studied by using pho-toelectrochemical technique. The potential φv, at which Cu2O on the electrode was completely reduced to Cu, was applied to characterize the interaction of Cu2O layer with the film, for example, Cu(I) BTA, formed from inhibitor on the Cu electrode. The more negative the φv, the more efficient the inhibitor. BTA might function as stabilizing Cu2O film on the surface. The corrosion resistance of copper was dependent on the Cu2O film. The inhibitive action of both BTA and PTD on Cu electrode was compared by photoelectrochemical method. The results were in agreement with those of ac impedance measurements.
出处
《中国腐蚀与防护学报》
CAS
CSCD
1998年第1期57-61,共5页
Journal of Chinese Society For Corrosion and Protection
基金
国家自然科学基金资助项目
上海市高校青年科学基金项目
