摘要
用ＳＥＭ和ＸＲＤ研究了金刚石薄膜与双层金属之间的接触及界面性质。采用微波等离子体ＣＶＤ方法在Ｓｉ（１１１）基片上淀积了掺硼金刚石薄膜，然后蒸发上Ｔｉ／Ａｕ金属层，在氩保护气氛下７００℃热处理５０ｍｉｎ后获得了一个线性的电流－电压特性。经ＳＥＭ和ＸＲＤ实验结果表明，Ｔｉ／Ａｕ金属与金刚石薄膜之间优良的接触性能的获得，显然是由于在金刚石薄膜－Ｔｉ／Ａｕ界面处产生了ＴｉＣ新相以及ＴｉＣ的浸润性质的缘故。
The contact and interface properties of bilayer metal to the diamond films have been investigated by SEM and XRD. The diamond films doped with boron are deposited on the Si (111) substrates by means of microwave plasma CVD, and then a metal layer Ti/Au is evaporated on the diamond films. After heat treatment at 700℃ for 50min in Ar atmosphere, the current voltage linear characteristics is obtained. The experiment results of SEM and XRD show that the excellent contact between the Ti/Au and the diamond films is obviously related with the formation and the infiltration of new phase TiC at the interface.
出处
《电子显微学报》
CAS
CSCD
1998年第2期162-165,共4页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金
关键词
金刚石薄膜
金属接触
界面热处理
浸润
diamond films\ metal contact\ interface\ heat treatment\ infiltration
