摘要
介绍了光化学汽相淀积法的原理以及用ＰＶＤ－１０００设备淀积薄膜的规律、特点等，并且给出了所淀积的ＳｉＯ２膜、Ｓｉ３Ｎ４膜和ＺｎＳ膜的基本特性。
The principle of photoenhanced chemical vapor deposition (PVD) is presented firstly,followed by description of the rule and properties of film deposition using PVD-1000 machine.Finally,basic characteristics of deposited films such as SiO 2,Si 3N 4 and ZnS are given.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
1998年第1期16-19,共4页
Semiconductor Optoelectronics
关键词
半导体材料
CVD
薄膜技术
Semiconductor Materials,PVD Technology,ZnS Films,SiO 2 Films,Si 3N 4 Films
