摘要
以二氧化硅、氮化硅薄膜为例论述了紫外光能量辅助化学汽相淀积的反应机制。二氧化硅薄膜的组成为纯ＳｉＯ２；氮化硅薄膜中含有氧元素，组成为氮氧化硅（ＳｉｘＮＹＯｚ）。
The reaction mechanism of UVenergy assist chemical vapor deposition(CVD)has been discussed using silicon oxide and silicon nitride film as an example.Pure SiO2 can be obtained for silicon oxide films.However,the element Oxygen is contained in silicon nitride films and the composition is silicon oxynitride(SixNyOz).
出处
《微电子学》
CAS
CSCD
北大核心
1997年第6期357-361,共5页
Microelectronics
