摘要
以纳米SiC为原料,用两面顶压机在不同工艺条件下(1100-1300℃,4.0-4.5GPa,20-35min)实现了无烧结助剂添加的SiC陶瓷体的烧结。研究了烧结工艺对SiC陶瓷性能的影响。用XRD、SEM、显微硬度测试仪等对SiC高压烧结体进行了表征。结果表明:采用超高压工艺可实现无烧结助剂SiC陶瓷高致密化烧结;烧结体晶粒长大得到抑制,维持在纳米级,晶格常数收缩发生了收缩;烧结体显微硬度和密度随烧结温度、烧结压力、保温时间的升高或延长而提高。在4.5GPa/1250℃/35min的超高压烧结条件下烧结的无烧结助剂SiC致密度达到96%,且显微硬度达到Hv1.963850。
High density SiC ceramics were fabricated with pure SiC nano powder under different technic condition （1100℃-1300℃, 4. 0-4. 5GPa, 20-35min） in China-type twain face anvils apparatus. The effect of sinter technic on the mechnical characteristics of SiC ceramics were studied. The sintered SiC were characterized by XRD. SEM, EDS and Micro-hardness tester. The results indicate that pure SiC can be sintered to high density by ultra-high pressure technique. The grain growth has been controlled, stay as nano grains, and crystal lattice shrinks. The micro-hardness and density increase with the increasing sinter temperature, pressure and time. The density of SiC sintered at the condition of 4.5GPa/1250℃ /35min by ultra-high pressure technic can reach 96% of its theory density and its micro-hardness is HV1.96 3850.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2009年第1期19-22,共4页
China Ceramics
关键词
碳化硅
烧结
超高压
Silicon Carbide （SIC）, Sinter, Ultra-high Pressure
