摘要
采用常压固相烧结法制备了Al-Ti共掺ZnO靶材,采用射频磁控溅射技术及真空退火工艺,在普通玻璃衬底上制备了具有[100]取向Al-Ti共掺杂ZnO薄膜(ZATO).采用X射线衍射(XRD)、扫描电子显微镜(SEM)对ZATO薄膜的生长机理、显微结构、形貌进行了测试分析,用四探针测试仪、紫外-可见分光光度计及荧光光谱仪对ZATO薄膜的光电性能进行了测试分析.结果表明,ZATO薄膜经500℃保温3h退火后,择优取向由(002)向(100)方向转变;此时,衍射谱上还观察到超点阵衍射线条.[100]取向ZATO薄膜的光学带隙从退火前的3.29降至2.86,平均可见光透过率从90%降至70%,表现为一般的透过性;而电阻率则从1.89×10^(-2)Ω·cm降至1.25×10^(-3)Ω·cm,呈现较好的导电性.薄膜中均出现了380nm附近的带边发射(NBE)峰以及410、564nm的深能级发射峰,且经500℃保温3h退火后,这些峰的位置并未改变,但峰强均明显减弱.对上述实验机理进行了分析讨论.
AI-Ti codoped ZnO（ZATO）films with（100）preferred orientation were grown on the glass substrates at room temperature by RF magnetron sputtering.The Al-Ti codoped ZnO ceramic targets used for sputtering were prepared by the conventional solid-state sintering process.The growth mecha- nism,microstructures and surface figures of ZATO films were investigated by X-ray diffraction（XRD） and scanning electronic microscope（SEM）,and its optical and electrical properties were respectively measured using a four-point probe technique and UV-756 spectrophotometer at room temperature.Af- ter the ZATO films annealed at 500℃for 3h,the preferred growth orientation of the films changes from （002）to（100）orientation,and the optic band gap reduces from 3.29eV to 2.86eV,and the average trans- mittance reduces from 90% to 70%,but the room-temperature resistivity reduces from 1.89×10（-2）Ω·cm to 1.25x 10-3Ω·cm.And at the same time,there is a super-lattice diffraction ray in the XRD patterns of annealed the ZATO films.The photoluminescence（PL）spectra confirm that there exhibit the near- band-edge（NBE）emission peaks at 380nm,and 410nm,564nm PL peaks of all the films.After the films are annealed at 500℃for 3h,the strength of these PL peaks drops,but its positions change little. The above experimental mechanisms were discussed.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第6期1101-1105,共5页
Journal of Inorganic Materials
基金
广西“电子信息材料与器件”科技创新团队基金
桂林电子科技大学软环境建设项目(2004-54)
关键词
ZNO薄膜
Ti-Al共掺杂
取向
光电性能
ZnO thin films
Ti-Al codopant
[100]orientation
photoelectric properties
