摘要
采用磁控溅射法在玻璃衬底上沉积掺锡氧化铟(ITO)薄膜,用X射线衍射(XRD)、X射线光电子能谱(XPS)技术和电导率、透射光谱测试技术,研究真空低温退火后ITO薄膜微结构、薄膜电导率、光谱透射率的变化.研究表明,真空低温退火使得晶体微结构得到改善,晶体呈(222)择优取向,晶体的结晶颗粒变大.不同价态的Sn对In3+的替代引起晶格结构和ITO薄膜的载流子浓度的变化,从而影响到薄膜的导电性和透射率,证明了真空退火下氧化铟薄膜微结构变化是影响薄膜电导率与透射率的主要原因,为研制新型光电器件的透明电极提供了参考.
Indium Tin Oxide films(ITO) have been prepared on glass substrate by magnetron sputtering. The effects of post-annealing on the microstructure and the surface texture of the ITO films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We also study the change of conductivity and transmission of the ITO films after post-annealing. The research shows the microstructure have been improve after post-anealing, the crystal prefer (200) orientation and the grain size become more large. The element of Sn replace the element of In^(3+) by different valence will cause the change of the lattice structure and the carrier concentration which have a relation with the optoelectronic quality of the ITO films. And the result proves the change of microstructure and component after post-anealing is the major factor to influent the conductivity and transmission of ITO films. This can give a reference to make the transparency electrode of new optoelectronic device.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第4期496-499,共4页
Journal of Xiamen University：Natural Science
基金
国家自然科学基金(60006004)
厦门大学自选课题基金 (Y0 70 0 7)资助
