摘要
介绍了金属氧化物薄膜电极的制备方法与过程,阐述了紫外光作用于金属氧化物半导体的光照机理。基于实际应用和市场需求,就有关光照后金属氧化物薄膜的气敏性能的研究现状进行了探讨,并展望了其今后的应用与研究方向。
The preparing method and process of electrode for metal oxide thin films were introduced. And the light radiation mechanism of ultraviolet light to the metal oxide semiconductor was illustrated. Based on actual use and market need, the gas sensitive properties of metal oxide thin films after light radiation were explored. Prospected were the future application and research direction.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第11期8-11,共4页
Electronic Components And Materials
基金
湖北省自然科学基金资助项目(No.2007ABA152)
甘肃省有色金属新材料国家重点实验室开放基金资助项目(No.SKL05004)
关键词
电子技术
紫外光
综述
纳米金属氧化物薄膜
气敏性能
electron technology
ultraviolet light
review
nano metal oxide thin film
gas sensitive properties