摘要
反应烧结是SiC陶瓷的一种重要制备工艺。本文分析了传统反应烧结工艺制备SiC陶瓷的不足,介绍了一些新型制备工艺;讨论了其烧结机理。并提出一些相关思考及展望。
Reaction sintering is a promising technique for silicon carbide ceramics. Analysing the poor performance of reaction bonded silicon carbide prepared by traditional technique, some novel techniques are introduced, with sintering mechanism. Relevant considerations and perspectives are proposed.
出处
《粉末冶金工业》
CAS
北大核心
2008年第5期48-53,共6页
Powder Metallurgy Industry
关键词
反应烧结SiC
烧结机理
展望
reaction bonded silicon carbide
sintering mechanism
perspective
