摘要
采用磁控溅射技术在SiO2基底上制备了ZnO薄膜。通过椭偏仪和X射线衍射仪(XRD)对薄膜光学特性、内部结构的表征,分析了氧气浓度和溅射功率对薄膜折射率、消光系数以及C轴晶格生长的影响。结果表明:氧气浓度的增加使薄膜的折射率变大,消光系数减小;氧气浓度从20%增至40%时,C轴晶向生长增强,当氧气浓度继续增加,C轴晶向生长受抑;溅射功率对薄膜的光学特性影响较小,对薄膜生长结构影响显著;当工作电流由1.0A增加至1.5A,C轴择优生长增强,当电流继续增加,C轴晶向减弱。
ZnO films were deposited on SiO2 substrates by reactive magnetron sputtering. Effects of oxygen concentration and discharge current on refractive index and extinction coefficient were studied by using ellipsometer and XRD. Results of ellipsometer and XRD were as follows： with increasing volume percentage of oxygen, the films were characterized by ascending refractive index and degressive extinction coefficient; When oxygen volume percentage was increased from 20 % to 40 %, the c-orientation growth of ZnO film got better, as keep on increasing, thing was on the other way. The discharge current affected the crystal microstructure strongly and affects the optical characters weakly. When discharge current was increased from 1.0 A to 1.5 A, the corientation growth of ZnO film got better, as keep on increasing, the c-orientation growth got weaken.
出处
《广州化工》
CAS
2008年第5期44-46,共3页
GuangZhou Chemical Industry
