摘要
提出了一种通过测量ＰＮ结的势垒电容的Ｃ－Ｖ特性来测量ＰＮ结的击穿电压ＶＢ的方法，与传统的方法相比它有更精细的击穿特性曲线；
A new method of measured breakdown voltage V B of PN junction by measuring C V characteristic of PN junction has been presented in this paper.It has got more fine curve of breakdown characteristic than traditional method.A new appliaction for the C V instrument has been developed.
出处
《中南民族学院学报（自然科学版）》
1997年第4期11-14,共4页
Journal of South-Central University for Nationalities(Natural Sciences)
关键词
PN结
势垒电容
C-V特性
击穿电压
半导体器件
PN junction
barrier capacitance
C V characteristic
space charge region
breakdown voltage Gong Daoben Assoc.Prof.,Dept.of Phys.,SCCFN,Wuhan 430074
