摘要
在不同的沉积温度下,用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备了Zr-N阻挡层。用四探针电阻测试仪(FPP)、AFM、XRD、AES研究了沉积温度对Zr-N薄膜扩散阻挡性能的影响。沉积态的XRD、AFM结果表明,随着沉积温度的升高,Zr-N薄膜的结构由非晶态向晶态转变,晶粒的尺寸增大;650℃退火后的FPP、XRD、AES的对比结果说明沉积温度的升高有利于提高Zr-N薄膜的扩散阻挡性能。
Zirconium nitride thin film was grown on Si（100） substrates under various substrate temperatures in a RF magnetron sputtering system. In order to investigate the effect of substrate temperature on diffusion barrier properties of Zr-N films, 4-point probe technique（FPP）, atomic force microscope （AFM）, X-ray diffraction （XRD）, and auger electron spectroscopy（AES） were performed respectively. XRD and AFM results before annealing show the microstructure of Zr-N films varies from amorphous to crystalline phase and grain sizes increase with increasing substrate temperature. FPP, XRD and AES results after annealing under 650℃ also show that Zr-N film has better diffusion barrier property with increasing substrate temperature.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第10期1612-1614,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50773014)
