摘要
简要介绍了集成电路的发展趋势及其带来的相关问题和解决办法。综述了国内外对Cu互连扩散阻挡层的制备方法与工艺、阻挡层的选材、阻挡层薄膜的特性等最新研究的进展。评述了该领域的发展趋势及可能的影响因素。
The development trends of integrated circuit, and its related problems and solutions are briefly described. Then, the preparation method and process, selecting of diffusion barrier materials, thin-layers properties and so on about the Cu interconnectiion diffusion barrier at home and abroad are reviewed. Finally, the comments on the development trends and its possible influence factors of this field are given.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第12期8-11,15,共5页
Materials Reports
基金
国家自然科学基金(NO60371046)资助项目
关键词
集成电路
CU互连
扩散挡层
阻挡性能
integrated citcuit, Cu interconnection, diffusion barrier, barrier property
