摘要
通过离子注入技术对达托霉素产生菌玫瑰孢链霉菌(Streptomyces roseosporus)进行诱变选育,使用N^+作为离子源,初步探讨N^+注入对达托霉素生产菌所产生的生物学效应。通过链霉素抗性筛选法获得多株遗传稳定性较好的高产突变株,其中突变株N3-36发酵单位比出发菌株提高了26%。
Streptomyces roseosporus C20, the bacteria used in production of daptomycin, were implanted with （15～200）×10^13/cm^2 of 20keV N＋ions. Survival rate of the bacteria at different absorbed doses was investigated, and mutagenic effects of the microbe were studied. After breeding under the selection pressure of resistance to streptomy- cin （the lethal concentration is 1.2μg/mL）, several mutant strains with higher yields of daptomycin have been obtained. One of mutant strains, N3-36, can increase up to 126% compared to the original strain. It also shows that the mutant strains have high genetic stability.
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
北大核心
2008年第5期317-320,共4页
Journal of Radiation Research and Radiation Processing
基金
福建省自然科学基金计划项目(C0710001)
福建省重大项目(2002Y008)资助
关键词
达托霉素
离子注入
链霉素抗性筛选
Dapotomycin, Ion implantation, Screening of streptomycin-resistance
