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深亚微米工艺下芯片的差分静态电流测试分析

A ΔI_(ddq) Test Solution for Deep Sub-micron Device
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摘要 在分析深亚微米工艺下芯片的差分静态电流(ΔIddq)测试原理的基础上,提出了一套深亚微米工艺下芯片的ΔIddq辅助测试解决方案。通过样本芯片,检验了ΔIddq测试方法的有效性;并根据检验结果,提出了Δ归一化的改进技术。经验证,这种优化后的ΔIddq辅助测量技术可有效筛选出功能测试不能覆盖的故障类型,提高了测试覆盖率。 A feasible △Iddq test solution was proposed for a video processor manufactured in deep sub-micron technology. The solution was optimized with normalized method, and validated with 500 device samples. Experimental results show that the △Iddq test method, which could effectively screen out defective devices that could not be found by functional test or other test methods, is a useful supplement to functional test.
作者 曹福全 石艳玲 陈哲 甘甜 温秀芝 刘婧
机构地区 华东师范大学信息科学与技术学院 迪艾自动测试设备有限公司
出处 《微电子学》 CAS CSCD 北大核心 2008年第5期633-636,共4页 Microelectronics
基金 上海市科委基金资助项目(04QMX1419,075007033)
关键词 差分静态电流测试 深亚微米器件 故障覆盖率 △Iddq test Deep submicron device Fault coverage
分类号 TN407 [电子电信—微电子学与固体电子学]
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参考文献8

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微电子学
2008年 第5期

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