摘要
本文研究了以SiH_4为气源,常压下化学气相淀积(APCVD)非晶态硅薄膜的光电特性及工艺参数的影响。通过与辉光放电a-Si:H膜的光电特性的比较,分析了APCVD a-Si膜的带隙结构和导电机理。
This paper reports the experimental device and preparation method for the a-Si thin film made by silane APCVD. The electronic and optical properties of the a-Si thin film and the effect of experimental parameter on its properties are studied. The dark conductivity is 10-10(Ω·cm)-1, the optical conductivity, 10-7(Ω·cm)-1, the thermal activation energy, 0.6eV-0.83eV and the optical gap, 1.5eV-1.68eV. The gap structure and conducting mechanism of the a-Si thin film are analyzed through a comparison with the electronic and optical properties of the GD a-Si : H thin film.
出处
《华中理工大学学报》
CSCD
北大核心
1990年第3期93-96,共4页
Journal of Huazhong University of Science and Technology
基金
国家自然科学基金
关键词
薄膜
非晶态
硅
电导率
气相淀积
Atmospheric pressure chemical vapor deposition
a-Si thin film
Conductivity
