摘要
本文首先利用离子束溅射聚四氟乙烯靶材的方法制备了薄膜，进而研究了其结构。由ＸＰＳ的结果可知，所得薄膜主要由ＣＦ２结构组成；由ＦＴＩＲ的结果可知，在１１６９ｃｍ－１和１０８３ｃｍ－１处出现了ＣＦ的最强吸收峰，在７３４ｃｍ－１，６１９ｃｍ－１和５００ｃｍ－１处出现了聚四氟乙烯的特征吸收峰。ＸＰＳ和ＦＴＩＲ的结果是一致的，所得薄膜呈现聚四氟乙烯的结构特征。
Teflom thin films have been synthesized by ion beam sputtering teflon target and their structures have been studied by XPS and FTIR. XPS showed that the films mainly consisted of CF2 structure; FTIR indicated that the strongest absorption peak of CF appear at 1169cm-1 and 1083cm-1 and the characteristic absorption peak of teflon appeared at 734cm-1 ,619cm-1 and 500cm-1. The results of XPS and FTIR coincided with each other, the obtained films possessed the structural characteristic of teflon.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第6期660-661,655,共3页
Journal of Functional Materials
关键词
离子束溅射沉积
聚四氟乙烯
薄膜
ion beam sputtering deposition, teflon, thin film
