摘要
针对目前用于半导体材料掺杂浓度纵向深度分布测量用的方法，如Ｃ－Ｖ法、电化学法等方法对样品造成的损伤或污染，本文提出一种非接触式的光热法测量技术。并结合室温下光热法测得的实验数据计算了ＧａＰ∶Ｎ多层材料中不同杂质浓度下的热导率，获得热导率随半导体内掺入的杂质浓度增加而减小的关系。这一结果与现有用光热法测量单层结构的半导体材料得到的规律相符合，从而表明了用光热法对层状半导体材料进行掺杂浓度纵向分布测量的可行性；同时还讨论半导体内临近层间结晶程度的差异对光热信号幅度造成的影响。
Aimed at the present methods of measuring dopant vertical distribution in semiconductors, such as C V method, electric chemistry method etc, which will dectruct or contaminate the semiconductor material, we put forward an undestructive method, the photo thermal technique. Based on the experiment data, which is obtained under the room temperature, we calculate the thermal diffusivities of different layers in GaP∶N material. The result shows that the thermal conductivity of semiconductor decreases while the dopant density increases. This acords to the conclusion drawn from measuring single layer semiconductor material through photo thermal technique. It makes possible to measure the dopant distribution in the verticle direction of the sample. The effect of the variation in crystallinity between adjacent layers on the photothermal signal amplitude is discussed in the paper.
出处
《光学技术》
CAS
CSCD
1997年第6期40-42,共3页
Optical Technique
基金
国家自然科学基金
关键词
半导体材料
光热方法
热导率
磷化镓
semiconduct material, photo thermal technique, thermal diffusivity.
