摘要
介绍了宽禁带半导体ZnO薄膜的制备工艺、主要性质和器件应用等几方面内容。ZnO薄膜的制备方法大致分为物理法和化学法。前者主要包括溅射、脉冲激光沉积和分子束外延等;后者则涵盖化学气相沉积、喷雾热解和溶胶-凝胶法等。从晶体结构、光学及电学等角度概述了ZnO薄膜的主要性质。与这些性质相联系的器件应用有太阳能电池、发光器件和紫外探测器等。对器件应用领域中存在的一些问题及其解决思路作了探讨。
The preparation, basic performance and applications of semiconducting ZnO films with wide forbidden band were reviewed. The preparation of ZnO thin films may, on the whole, be divided into physical and chemical processes. The former mainly includes sputtering, PLD （pulse laser deposition） and molecular beam epitaxy, while the latter includes chemical vapor deposition, spray pyrolysis and sol-gel methods and so on. The basic performance of ZnO thin films is discussed in view of their crystal structures, optics and electrics. What applications in relation to the basic performance cover solar cells, luminescent devices and UV detectors, etc. Some existing problems in the applications and the solutions to them are briefly discussed.
出处
《真空》
CAS
北大核心
2008年第5期54-61,共8页
Vacuum
基金
天津市高校科技发展基金项目(No.20060605)。
关键词
ZNO薄膜
制备工艺
光电特性
光电器件
ZnO thin film
preparation process
photoelectric properties
optoelectronic device
