摘要
利用离子束镀膜技术,在非超高真空(1.33×10^(-3)Pa)下,采用离子束清洗衬底表面和对衬底加热的辅助方法,在单晶Si衬底上淀积Co薄层,再在Co层上淀积Si保护层,然后在570—680℃下进行真空(6.67×10^(-3)Pa)退火,能形成有害杂质(O、C等)含量少且界面区域过渡陡峭的CoSi_2/Si异质结。本文利用俄歇电子能谱(AES),X射线光电子谱(XPS)和紫外光电子谱(UPS)对样品的组分、化学相和电子结构进行了分析。
The ion beam sputtering equipment is used to deposit Co film onSi substrate,and then deposit a layer of amorphous Si over the Cofilm under non-ultrahigh vacuum(1.33×10^(-3)Pa),in which the sub-strate was heated and cleaned by ion beam.Then,the sample wasannealed for 30 minutes at 570—680℃ in 6.67×10^(-3) Pa.The composi-tion,chemical phase and electronic structure of the sample,wereanalysed by Auger electron spectra(AES).x-ray photoemissionspectroscopy(XPS)and ultraviolet photo-emission spectroscopy(UPS).The result showed that the Si/CoSi_2/Si hetere structure hasbeen formed,moreover,sharp interface and a little oxygen,carbonpresent in the sample.The electronic bonding energy of non-bondingpeak of Co-3d orbit in CoSi_2 is 1.2-1.4 ev.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1990年第4期75-81,共7页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
关键词
异质结
电子结构
金属硅化物
heterojunction
electronic structure
photo-electron spectroscopy
