摘要
本文首次报道了Ａｌ／ｐ－Ｓｉ１－ｘＧｅｘ肖特基（Ｓｃｈｏｔｔｋｙ）接触的制备与电学性质．Ｓｉ１－ｘＧｅｘ／Ｓｉ应变外延层采用快速加热、超低压化学气相淀积方法生长．实验表明，改变Ｇｅ组分ｘ的大小可以调节肖特基势垒高度．随着Ｇｅ组分的增大，肖特基势垒高度降低，其降低值与Ｓｉ１－ｘＧｅｘ应变层带隙的降低值相一致，界面上费米能级钉扎于导带下约０．４３ｅＶ处．文中还研究了ＳｉＧｅ合金层的应变弛豫以及Ｓｉ顶层对肖特基接触特性的影响．
Abstract We report the fabrication and electronic propertise of Al/p-Si1-xGex Schottky contacts for the first time.Si1-xGex strained layers were grown on Si substrates by Rapid Thermal Process/Very Low Pressure-CVD. Experiments show that the Schottky barrier height of Al/p-Si1-xGex can be controlled by Ge fraction x.With increasing of Ge fraction,Schottky barrier height decreases,and the decrement is in accordance with the decrement of the strained Si1-xGex bandgap.the Fermi level at the interface is pinned at about 0.43eV below the conduction band.The influence of strain relaxation in SiGe alloy layers and Si cap layers on the properties of Schottky contacts are also investigated.
基金
国家"八六三"高技术资助
