摘要
采用电化学的方法在半导体Si表面沉积了CuCo颗粒膜。研究了膜层电沉积过程中颗粒膜生长的显微结构及热处理过程颗粒膜元素的分布情况。经过450℃退火处理1h后Cu80Co20薄膜GMR达到最大值,随着温度的升高膜层的电阻率也随之下降。面扫描元素分析和XRD分析表明经过退火处理膜层中出现Co粒子的析出,出现了局部富钴的区域。磁阻测量表明此时有利于提高膜层的GMR值。更高温度的退火处理使GMR值降低。磁性能测量发现随着退火温度的提高膜层的饱和磁化强度Ms、矫顽力Hc和剩余磁化强度Mr也随着变大。
CuCo granular flims were prepared by electrodeposition on semiconductor Si. We studied the microstucture of the granular films during electrodepositing and elements distribution of the granular flim after annealing. The maximum value of GMR was obtained at Cu80Co20 flim after annealing at 450℃ for lh, with increasing the temperature of annealing, the electrical resistivity was dropped. Surface scanning for elements analysis and XRD show that the separation of Co grain was occurred during annealing,and part Co-rich regions was appeared. It was contribution to improved the value of GMR by resistance measure. The value of the GMR was decreased after annealing at higher temperature. The saturation magnetiation Mn, coercive force Hc, remanence magnetization Mr were increased with improved the annealing temperature by magnetization measure.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第9期1425-1429,共5页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2003AA305620)
关键词
电沉积
CuCo颗粒膜
巨磁电阻
退火温度
磁性能
electrodeposition
CuCo granular flims
giant magnetoresistance
annealing temperature
magnetization
