摘要
采用模拟退火算法对基于物理模型的ＧａＡｓ／ＧａＡｌＡｓＨＢＴ小信号等效电路参数进行了优化提取。计算结果表明，采用模拟退火算法，避免了求导优化算法收敛于局域极小的缺陷，结果与初值选取无关，精度得到了提高，速度也较快。
Parameters of the small signal equivalent circuit for GaAlAs heterojunction bipolar transistors(HBT′s)based on a physical model have been extracted using simulated annealing algorithm.Calculations show that by using this algorithm,entrapment in the local minima can be avoided and the calculation results is not dependent on the initial point.With improved accuracy and acceptable speed,the algorithm provide a useful method for extraction of device parameters.
出处
《微电子学》
CAS
CSCD
北大核心
1997年第6期366-368,383,共4页
Microelectronics
关键词
异质结
双极晶体管
参数提取
模拟退火算法
Parameter extraction, Small signal circuit, Simulated annealing algorithm, HBT
